| Parameter | Reported / Inferred Value | Source | |-----------|---------------------------|--------| | | Quantum‑dot LED (QD‑LED) module | Patent, conference abstract | | Emission peak | ~450 nm (blue) | Marketplace listing | | Substrate | InGaAs (Indium Gallium Arsenide) | Internal design doc | | Capping layer | ZnSe (Zinc Selenide) | Internal design doc | | Peak external quantum efficiency (EQE) | ≈12 % (reported under lab conditions) | Conference abstract | | Operating temperature range | Up to 85 °C (tested) | Conference abstract | | Thermal resistance | R_th ≈ 0.85 K W⁻¹ (simulated) | Applied Physics Letters paper | | Form factor | Small‑area (≈2 mm × 2 mm) module, wire‑bonded to a carrier board | Marketplace listing | | Status | Prototype / limited‑run experimental unit | All sources |
The exact ownership , production scale , full specification set , and intellectual‑property posture . These gaps are typical for early‑stage hardware that has not yet entered mass production. juq-201